F. Roozeboom

S. De Gendt

A. Delabie

J. W. Elam

O. van der Straten

A. Londergan

Atomic Layer Deposition Applications 10

P. J. Timans

K. Kakushima

Z. Karim

H. Jagannathan

E. P. Gusev

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 7

C. Huffman

Atomic Layer Deposition Applications 11

This issue of ECS Transactions covers emerging materials, process and technology options for large-area silicon wafers to enhance advanced IC performance or to enable revolutionary device structures with entirely new functionalities. Topics : high-mobility channel materials, (e.g. strained Si/Ge, compound semiconductors and graphene), high-performance gate stacks and low-resistivity junctions and contacts on new, Si-compatible materials; new materials and processes for 3-D (TSV) integration ; synthesis of nano-structures including wires, pores and membranes of Si-compatible materials; novel MEMS/NEMS structures and their integration with the mainstream Si-IC technology.

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications

E. Gusev

D. Misra

Y. S. Obeng

This issue of ECS Transactions includes papers based on presentations from the symposium "Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9," originally held at the 235th ECS Meeting in Dallas, Texas, May 26-30, 2019.

Silicon Compatible Emerging Materials, Processes, and Technologies for Advanced CMOS and Post-CMOS Applications 9

F. Roozeboom

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