Fred Roozeboom

These proceedings describe processing, materials, and equipment for CMOS front-end integration including gate stack, source/drain and channel engineering. Topics: strained Si/SiGe and Si/SiGe on insulator; high-mobility channels including III-V¿s, etc.; nanowires and carbon nanotubes; high-k dielectrics, metal and FUSI gate electrodes; doping/annealing for ultra-shallow junctions; low-resistivity contacts; advanced deposition (e.g. ALD, CVD, MBE), RTP, UV, plasma and laser-assisted processes.

New Materials, Processes and Equipment

Advanced Gate Stack, Source/drain, and Channel Engineering for Si-based CMOS 2

Evgeni Gusev

Paul Timans

Vijay Narayanan

Kuniyuki Kakushima

Zia Karim

Stefan De Gendt

Silicon Compatible Materials, Processes, and Technologies for Advanced Integrated Circuits and Emerging Applications 6

The proceedings from this May 2000 symposium illustrate the range of applications in Rapid Thermal Processing (RTP). The refereed papers cover a variety of issues, such as ultra-shallow junctions; contacts for nanoscale CMOS; gate stacks; new applications of RTP, such as for the enhanced crystalization of amorphous silicon thin films; and advances on RTP systems and process monitoring, including optimizing and controlling gas flows in an RTCVD reactor. Most presentations are supported by charts and other graphical data. c. Book News Inc.

Proceedings of the International Symposium

Rapid Thermal and Other Short-time Processing Technologies

Fred Roozeboom

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