J. Weber

N.A. Stolwijk

W. Zulehner

R. Murray

C.A.J. Ammerlaan

H. Bracht

E.E. Haller

R.C. Newman

R. Sauer

Vols. III/17a-i and III/22a,b (supplement) on semiconductor physics and technology have been published earlier, the latter covering new data on the technologically important group IV elements, IV-IV and III-V compounds only. The wealth of further data from the last decade is now being critically evaluated by over 30 well-known experts in the field of semiconductors. To meet the demands of today's scientists and to offer a complete overview on semiconductor data all data available so far are published in the following way: a series of eight subvolumes cover only the supplementary data to vols. III/17 and 22. Enclosed to each subvolume, a CD-ROM contains a complete, revised and update edition of all relevant data. For each individual substance the information is presented in userfriendly documents, containing numerical data, figures and references. Easy access to the documents is provided via substance and property keywords, listing and full text retrieval.

Supplement to Vol.III/22b (Print Version). Revised and Updated Edition of Vol.III/22b (CD-ROM)

Group IV Elements

H. Bakker

H.P. Bonzel

C.M. Bruff

M.A. Dayananda

W. Gust

J. Horvath

I. Kaur

G.V. Kidson

A.D. LeClaire

H. Mehrer

Gaeme E. Murch

G. Neumann

N. Stolica

The interest in diffusion in solids is as old as physical metallurgy or materials science. It stems from application-oriented as well as from scientific reasons. First, a knowledge of diffusion is basic to an understanding of many microstructural changes that occur in solid matter at elevated temperatures. For processes like phase transformations, precipitation or dissolution of a second phase, recrystallization, oxidation, creep, annealing etc., solid state diffusion is fundamental and ubiquitous. The second reason for studying diffusion is to learn more about how atoms move in solid matter. Volume III/26 presents for the first time a comprehensive collection of diffusion data for solid metals and alloys. The critical compilation of data has resulted in tables and series of diagrams which show in 13 chapters data for the following properties: Self- and impurity-diffusion in metallic elements, self-diffusion in homogeneous binary alloys, chemical diffusion in binary and ternary alloys, diffusion in amorphous alloys, diffusion of interstitial foreign atoms like hydrogen, carbon, oxygen and nitrogen in metallic elements, mass and pressure dependence of diffusion, diffusion along dislocations, grain and interphase boundary diffusion, and diffusion on surfaces.

Diffusion in Solid Metals and Alloys / Diffusion in festen Metallen und Legierungen

N.A. Stolwijk

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